A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

Copper-Indium-Gallium-diSelenide (CIGS) Nanocrystalline Bulk Semiconductor as the Absorber Layer and Its Current Technological Trend and Optimization

The Copper Indium Gallium diSelenide (CIGS) thin film solar cells are considered in this chapter. The interest in Cu(In1-x, Gax)Se2 thin film solar cells has increased significantly due to its promising characteristics for high performance and low cost. It is aimed to present an extensive evaluation on CIGS nanocrystalline bulk semiconductor and its application as an absorber layer for thin fil...

Thin Film Solar Cells from Nanocrystal Inks of Quaternary Chalcogenides

The creation of a suitable inorganic colloidal nanocrystal ink for use in a scalable coating process is a key step in the development of low-cost thin film solar cells. We have developed an innovative method of using copper indium gallium disulfide (CIGS) nanocrystals as the building block for the fabrication of bulk CIGSSe thin films. The CIGS nanocrystal ink solution is applied directly on va...

PACS numbers: 78.20.Bh, 73.40.Lq, 84.60.Jt SIMULATION OF CIGS THIN FILM SOLAR CELLS USING AMPS-1D

The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied ...

Modelling and Degradation Characteristics of Thin-film CIGS Solar Cells

Thin-film ZnO/CdS/CuIn1−xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1−xGaxSe2 Absorber

Thin-film ZnO/CdS/CuIn1−xGaxSe2 solar cells are manufactured with∼20% solar-cell conversion efficiency. The CuIn1−xGaxSe2 (CIGS) absorber exhibits rather different physical properties compared with conventional semiconductors (e.g. Si, GaAs and ZnSe). For instance, (i) the valence-band maximum in CIGS consists of cation-d–anion-p hybridized states. (ii) Cation vacancies have low formation energ...